Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
IXYS introduce the D3Pak-HV package (TO-268 HV) that offers high voltage capability due to the 1200V rating designed in the creepage distance. The products introduced in the TO-268HV packages are Fast ...
Output diodes with fast recovery speeds have been developed for increasing the efficiency and reducing the size, weight and cost of power supplies. The new 8ETU04, 16CTU04, 30CPU04 and 60EPU04 ...
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