International Rectifier introduces the AUIRS2191S 600 V driver IC and AUIRGP50B60PD1 600 V non-punch-through (NPT) insulated gate bipolar transistor (IGBT) for use in energy-efficient dc-dc automotive ...

IGBTs are bipolar power switches that are designed in terms of both their physical structures and material doping levels to meet the needs of many different applications. There are a variety of ...

In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the introduction of collector shorts. Since this modification made the device behave like a very low RDS(on) MOSFET, ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

While the renewable energy revolution is gaining momentum, third-generation wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) continue to see rising penetration in solar power, ...

(Image courtesy of Elsevier Publishing). Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely ...

Magnachip Semiconductor Corporation has launched its new series of IGBTs designed for solar inverters and industrial ESS, further strengthening its position in the high-efficiency power semiconductor ...

Power semiconductor devices such as SiC MOSFETs, IGBT, and GaN are experiencing increasingly fierce competition in EV, charging pile, energy storage, and renewable energy applications, but their ...