Researchers have demonstrated that the layered multiferroic material nickel iodide (NiI2) may be the best candidate yet for devices such as magnetic computer memory that are extremely fast and compact ...

Researchers have developed a new type of memory cell that can both store information and do high-speed, high-efficiency calculations. The memory cell enables users to run high-speed computations ...

A large modern computer can contain nearly half a million switching elements and 10 million high-speed memory elements. They ...

Researchers have developed a new type of memory device that they say could reduce the energy consumption of artificial intelligence (AI) by at least 1,000. Called computational random-access memory ...

Scientists have made a significant advance in developing alternative materials for the high-speed memory chips that let computers access information quickly and that bypass the limitations of existing ...

Recent advances in the field of artificial intelligence (AI) have opened new exciting possibilities for the rapid analysis of ...

A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

Adrian Ward had been driving confidently around Austin, Texas, for nine years — until last November, when he started getting lost. Ward’s phone had been acting up, and Apple Maps had stopped working.

Think about the last time you studied for an exam. You probably read your notes, went through textbooks, maybe even watched a few videos. Yet, when the paper was placed before you, your mind went ...

Materials with high magnetoelectric coupling could be useful in novel devices such as magnetic computer memories, chemical sensors and quantum computers. When researchers irradiate a thin layer of ...