Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...
Low-Power Double Data Rate (LPDDR) emerged as a specialized high performance, low power memory for mobile phones. Since its first release in 2006, each new generation of LPDDR has delivered the ...
Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...
A diagram of the material developed using on-axis magnetron sputtering. By applying a current through the platinum material on top of the TmIG, researchers were able to reverse the magnetization ...
Total Revenues To Reach $133.75 Billion By 2030, Driven By The Rising Demand For High-Speed Memory In AI And 5G Applications. Dublin, Jan. 27, 2026 (GLOBE NEWSWIRE) -- The Semiconductor Memory Market ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced sampling [1] of the industry’s first [2] Universal Flash Storage [3] (UFS) Ver. 4.0 embedded flash ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...
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