The small and complicated features of TSVs give rise to different defect types. Defects can form during any of the TSV ...

Advanced process technologies are generating significant challenges for modern IC designers as the physics of the 130- and 90-nanometer generation bring what were previously noise-level effects to the ...

As technology nodes shrink to 90 nanometers and below, chips become much more difficult to manufacture. In-die process variations increase substantially at 90 nm — even more at 65 nm. If these effects ...

In a recent study done by McKinsey and IDC, we see that physical design and verification costs are increasing exponentially with shrinking transistor sizes. As figure 1 shows, physical design (PD) and ...

With semiconductor feature sizes continuing to shrink, the variability arising from process technologies such as strained silicon, as well as the manufacturing processes themselves at 45 nm and below, ...