In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
Characterizing SSBW for VFAs and FDAs. What's hiding in some fully differential amplifiers? Measuring response shape and harmonic distortion. Adding an input common-mode control loop to a legacy FDA.
Editor's note: This article will be in two parts. This Part 1 will discuss latest advances in 'Zero-Drift' Op Amps and Noise. Self-correcting or ‘Zero-Drift’ operational amplifiers, as this device ...
Spice model makes it easy to design with PWM amplifiersHigh-efficiency PWM amplifiers are displacing linear designs in many applications. You can design a constant-current or a constant-voltage PWM ...
A Small-Satellite-Mounted 256-Element Ka-Band CMOS Phased-Array Transmitter Achieving 63.8dBm EIRP Under 26.6W Power Consumption Using Single/Dual Circular Polarization Active Coupler, 2023 IEEE ...
Light does a lot of work in the modern world, enabling all types of information technology from TVs to satellites to fiber-optic cables that carry the ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results