Abstract: Accurate thermal evaluations based on the classical subcircuit method for advanced transistors (e.g., FinFETs and GAAFETs) have become more complex and time-consuming. This study proposes a ...
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GA, UNITED STATES, January 9, 2026 /EINPresswire.com/ — Reservoirs form the lifelines of water and energy security, yet their long-term dynamics remain poorly ...
Abstract: Detailed temperature field distribution of high-power insulated gate bipolar transistor (IGBT) modules is essential information for reliability analysis and thermal design of power ...