Abstract: Spin transfer torque magnetic random access memory (STT-MRAM) offers a promising solution for low-power and high-density memory due to its compatibility with CMOS, higher density, scalable ...
Abstract: This letter presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor ...
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