Drillhole CMV25001 intersected 102g/t Ag Eq. over 2.55 m within a broader zone of 64 g/t Ag Eq. over 4.7 m from 66m (Table 1) and including 0.4 m wide epithermal mineralized zone with 453 g/t Ag Eq.
Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...
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